Apparatuses and methods of protecting nickel and nickel containing components with thin films

ABSTRACT

Methods and apparatus for depositing a coating on a semiconductor manufacturing apparatus component are provided herein. In some embodiments, a method of depositing a coating on a semiconductor manufacturing apparatus component includes: sequentially exposing a semiconductor manufacturing apparatus component including nickel or nickel alloy to an aluminum precursor and a reactant to form an aluminum containing layer on a surface of the semiconductor manufacturing apparatus component by a deposition process.

FIELD

Embodiments of the present disclosure generally relate to depositionprocesses such as vapor deposition processes for depositing films onsemiconductor manufacturing components.

BACKGROUND

Semiconductor manufacturing equipment such as a chemical vapordeposition chambers have components which corrode or degrade over timedue to being exposed to hot gases and/or reactive chemicals. Forexample, the inventors have found a showerhead component of a depositionchamber made of nickel or nickel containing material such as nickelalloys problematically degrade when subjected to hot gases and harshchemical reaction conditions including reactants such as silanes. Thedegradation of one or more deposition chamber components such as ashowerhead will detrimentally impact the surface and bulk properties ofthe components in the manufacturing equipment and promote or result inalterations in chemical process conditions and/or defects of thesemiconductor device to be manufactured therein.

The inventors have observed coatings upon nickel and nickel alloycomponents in semiconductor manufacturing equipment are problematic inthat coatings may be too thin to be protective or may adhere poorly toan adjacent contacting surface. Further, the inventors have observedcoatings deposited upon nickel and nickel alloy components may be toobrittle reducing the life of the component when exposed to stress suchas high temperature and/or reactive gases.

Therefore, protective coatings atop nickel and/or nickel alloysemiconductor manufacturing equipment components and methods fordepositing the protective coatings atop nickel and/or nickel alloysemiconductor manufacturing apparatus components are needed.

SUMMARY

Methods and apparatus for depositing a coating on a semiconductormanufacturing apparatus component are provided herein. In someembodiments, a method of depositing a coating on a semiconductormanufacturing apparatus component includes sequentially exposing asemiconductor manufacturing apparatus component including nickel ornickel alloy to an aluminum precursor and a reactant to form an aluminumcontaining layer on a surface of the semiconductor manufacturingapparatus component by a deposition process.

In some embodiments, a method of depositing a coating on a semiconductormanufacturing apparatus component includes: sequentially exposing asemiconductor manufacturing apparatus component having a first surfaceincluding nickel or nickel alloy to a first precursor and a firstreactant to form a buffer layer having a top surface on the firstsurface by a first vapor deposition process; and exposing an aluminumprecursor and a second reactant to form an aluminum containing layer onthe top surface by a second vapor deposition process.

In some embodiments, the present disclosure relates to a semiconductormanufacturing apparatus component, including: an aluminum containinglayer disposed on a nickel or nickel alloy surface of the semiconductormanufacturing apparatus component, wherein the semiconductormanufacturing apparatus component is one or more of a showerhead, awall, a lid, a ring, a bottom, a blocker plate, or a substrate supportassembly.

In some embodiments, the present disclosure relates to a non-transitorycomputer readable medium having instructions stored thereon that, whenexecuted, cause a deposition chamber to deposit a coating on asemiconductor manufacturing apparatus component by sequentially exposinga semiconductor manufacturing apparatus component including nickel ornickel alloy to an aluminum precursor and a reactant to form an aluminumcontaining layer on a surface of the semiconductor manufacturingapparatus component by a deposition process.

In some embodiments, the present disclosure relates to a non-transitorycomputer readable medium having instructions stored thereon that, whenexecuted, cause a deposition chamber to deposit a coating on asemiconductor manufacturing apparatus component by sequentially exposinga semiconductor manufacturing apparatus component having a first surfacecomprising nickel or nickel alloy to a first precursor and a firstreactant to form a buffer layer having a top surface on the firstsurface by a first vapor deposition process; and exposing an aluminumprecursor and a second reactant to form an aluminum containing layer onthe top surface by a second vapor deposition process.

Other and further embodiments of the present disclosure are describedbelow.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the present disclosure, briefly summarized above anddiscussed in greater detail below, can be understood by reference to theillustrative embodiments of the disclosure depicted in the appendeddrawings. However, the appended drawings illustrate only typicalembodiments of the disclosure and are therefore not to be consideredlimiting of scope, for the disclosure may admit to other equallyeffective embodiments.

FIG. 1 depicts a flow chart of a method for depositing a coating on asemiconductor manufacturing apparatus component in accordance with someembodiments of the present disclosure.

FIGS. 2A-2B depict the stages of depositing a coating on a semiconductormanufacturing apparatus component in accordance with some embodiments ofthe present disclosure.

FIG. 3 depicts a flow chart of a method of depositing a coating on asemiconductor manufacturing apparatus component in accordance with someembodiments of the present disclosure.

FIGS. 4A-4C depict the stages of depositing a coating on a semiconductormanufacturing apparatus component in accordance with some embodiments ofthe present disclosure.

FIG. 5 depicts a deposition chamber including components for coating inaccordance with the present disclosure.

FIG. 6 depicts a cluster tool suitable for performing one or moremethods in accordance with some embodiments of the present disclosure.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. The figures are not drawn to scale and may be simplifiedfor clarity. Elements and features of one embodiment may be beneficiallyincorporated in other embodiments without further recitation.

DETAILED DESCRIPTION

Embodiments of the present disclosure generally relate to protectivecoatings, such as metal oxide film or film stacks disposed onsemiconductor manufacturing equipment components and methods fordepositing the protective coatings. Non-limiting examples ofsemiconductor manufacturing equipment components to be coated inaccordance with the present disclosure may include one or moreshowerheads, heater assemblies, heated chucks, backing plates or anyother semiconductor manufacturing equipment components, part or portionthereof that can benefit from having protective coating of the presentdisclosure deposited thereon or adhered thereto. The protective coatingsof the present disclosure can be deposited or otherwise formed oninterior surfaces and/or exterior surfaces of the semiconductormanufacturing equipment components. in embodiments, the protectivecoatings of the present disclosure are deposited on or directly atop asemiconductor manufacturing apparatus component or a top surface of thesemiconductor manufacturing apparatus component including metallicnickel, nickel alloy, super alloy including nickel, or a nickel-platinumalloy as described below.

In one or more embodiments, a method for depositing a coating on asemiconductor manufacturing apparatus component, includes sequentiallyexposing a semiconductor manufacturing apparatus component or portionthereof including nickel or nickel alloy to an aluminum precursor and areactant to form an aluminum containing layer on a surface of thesemiconductor manufacturing apparatus component by a deposition process.In some embodiments, the aluminum containing layer is aluminum oxide(Al₂O₃). The coated semiconductor manufacturing apparatus components ofthe present disclosure advantageously include robust components havingcoated nickel and/or coated nickel alloy surfaces resistant to harshdeposition conditions including high temperatures and reactive gasessuch as silane. In some embodiments, the coated semiconductormanufacturing apparatus components are immune from harsh chemicals suchas chlorine, titanium chloride (TiCl₃ or (TiCl₄) plasma, fluorineplasma, hydrogen plasma, nitrogen plasma, silanes such as SiH₄ atelevated temperatures greater than 150 degrees Celsius, greater than 250degrees Celsius, greater than 300 degrees Celsius, or between 150degrees Celsius and 350 degrees Celsius. In embodiments, the coatingsare robust and resilient and advantageously maintain or increase thelife of the component when exposed to stress such as high temperatureand/or reactive gases. Accordingly, the coated semiconductormanufacturing apparatus components of the present disclosure promote theformation of robust semiconductor devices made in the semiconductormanufacturing equipment including coated components in accordance withthe present disclosure.

FIG. 1 is a flow chart of a method 100 for depositing a coating on oneor more semiconductor manufacturing components, according to one or moreembodiments described and discussed herein. FIGS. 2A-2B depict thestages of depositing a coating on a semiconductor manufacturingapparatus component in accordance with method 100. FIG. 5 depicts adeposition chamber suitable for performing one or more methods inaccordance with embodiments of the present disclosure as well as showingvarious components or portions thereof suitable as semiconductormanufacturing apparatus components for coating in accordance with thepresent disclosure.

Referring to FIGS. 1, 2A, and 2B, at block 120 the coated semiconductormanufacturing apparatus component 201 may be formed by sequentiallyexposing a semiconductor manufacturing apparatus component 202 includingnickel or nickel alloy to an aluminum precursor and a reactant to forman aluminum containing layer 220 on a surface 210 of the semiconductormanufacturing apparatus component 202 by a deposition process such as avapor deposition process. In embodiments, the vapor deposition processcan be an ALD process, a plasma-enhanced ALD (PE ALD) process, a thermalchemical vapor deposition (CVD) process, a plasma-enhanced CVD (PE-CVD)process, or any combination thereof.

In embodiments, the semiconductor manufacturing apparatus component 202may be a component, portion, or surface of the apparatus of FIG. 5 suchas showerhead 518, interior side 520, lid 510, blocker plate 536including nickel or nickel alloy or including an outer surface of nickelor nickel alloy. In some embodiments, the nickel or nickel alloyincludes metallic nickel, nickel alloy, or super alloy including nickelnickel-platinum alloy. In some embodiments, the metallic nickel is of ahigh purity metal, such as 99.9% or greater, and may contain metallicnickel or a nickel alloy. Non-limiting examples of nickel ahoy suitablefor use herein include nickel-platinum alloy, INCONEL® brandnickel-chromium-based alloys, HASTELLOY® brandnickel-molybdenum-chromium alloy or superalloy, or Monel nickel alloysincluding nickel and copper. In some embodiments, nickel ahoy maycontain a nickel concentration by weight within a range from about 80%to about 98%, such as from about 85% to about 95%, as well as one ormore other metals such as platinum, copper, molybdenum, chromium, orcombinations thereof in a concentration by weight within a range fromabout 2% to about 20%, such as from about 5% to about 15%. In someembodiments, the nickel alloy contains nickel-platinum alloys such asNiPt5% (about 95 wt % of nickel and about 5 wt % of platinum), NiPt10%(about 90 wt % of nickel and about 10 wt % of platinum), or NiPt15%(about 85 wt % of nickel and about 15 wt % of platinum). In someembodiments the nickel includes polyalloys comprising a major portion ofnickel and minor proportions of an element selected from boron orphosphorus and one or more metals such as tin, tungsten, iron,molybdenum, chromium, or copper.

In embodiments, the vapor deposition process is an ALD process and themethod 100 further includes sequentially exposing the semiconductormanufacturing apparatus component 202 or surface thereof to the aluminumprecursor and the reactant to form an aluminum containing layer 220 on asurface 210. In some embodiments, each cycle of the ALD process includesexposing the semiconductor manufacturing apparatus component 202 orsurface thereof to the aluminum precursor, conducting a purge, exposingthe semiconductor manufacturing apparatus component 202 or surfacethereof to one or more reactants, and conducting another purge. In someembodiments, each cycle of the ALD process is characterized as apump-purge and is performed to form an aluminum containing layer 220 ona surface 210 of the semiconductor manufacturing apparatus component202. In embodiments, the order of the aluminum precursor and thereactant can be reversed, such that the ALD cycle includes exposing thesemiconductor manufacturing apparatus component 202 or surface thereofto the reactant, conducting a purge, exposing the semiconductormanufacturing apparatus component 202 to the aluminum precursor, andconducting another purge to form the aluminum containing layer 220.

In some embodiments, during each ALD cycle, the semiconductormanufacturing apparatus component 202 is exposed to the aluminumprecursor for about 0.05 seconds to about 10 seconds, the first reactantfor about 0.05 seconds to about 10 seconds, and the purge for about 0.5seconds to about 30 seconds. In other examples, during each ALD cycle,the semiconductor manufacturing apparatus component 202 is exposed tothe aluminum precursor for about 0.05 seconds to about 3 seconds, thefirst reactant for about 0.05 seconds to about 3 seconds, and the purgefor about 1 second to about 10 seconds. In embodiments, the firstreactant is water.

In some embodiments, an ALD cycle is repeated from 2, 3, 4, 5, 6, 8,about 10, about 12, or about 15 times to about 18, about 20, about 25,about 30, about 40, about 50, about 65, about 80, about 100, about 120,about 150, about 200, about 250, about 300, about 350, about 400, about500, about 800, about 1,000, about 200, about 3000, about 4000, about5000, about 5,500, about 6,000 or more times to form the aluminumcontaining layer 220.

In some embodiments, the vapor deposition process is a CVD process andthe method includes simultaneously exposing the semiconductormanufacturing apparatus component to the aluminum precursor and thefirst reactant to form the aluminum containing layer 220. During an ALDprocess or a CVD process, each of the first precursor and the firstreactant can independent include one or more carrier gases. One or morepurge gases can be flowed across the semiconductor manufacturingapparatus component such as semiconductor manufacturing apparatuscomponent 202 and/or throughout the processing chamber in between theexposures of the aluminum precursor and the first reactant in someexamples, the same gas may be used as a carrier gas and a purge gas.Exemplary carrier gases and purge gases can independently be or includeone or more of nitrogen (N₂), argon, helium, neon, hydrogen (H₂), or anycombination thereof.

In some embodiments, the aluminum containing layer 220 can have athickness sufficient to protect the semiconductor manufacturingapparatus component 202 from harsh conditions as mentioned herein. Insome embodiments, the aluminum containing layer 220 can have a thicknessof about 1.0 nm to 1,500 nm, or about 100 nm to 1,000 nm for example,about 1 nm, about 2 nm, about 3 nm, about 5 nm, about 8 nm, about 10 nm,about 12 nm, or about 15 nm to about 18 nm, about 20 nm, about 25 nm,about 30 nm, about 40 nm, about 50 nm, about 60 nm, about 80 nm, about100 nm, about 120 nm, about 150 nm, about 200 nm, about 300 nm, about400 nm, about 500 nm, about 600 nm, about 700 nm, about 800 nm, about900 nm, about 950 nm, about 1,000 nm, about 1,100 nm, about 1,200 nm.

In some embodiments, the aluminum precursor contains one or morealuminum precursors. In embodiments, the first reactant contains one ormore reducing agents, one or more oxidizing agents, one or morenitriding agents, one or more silicon precursors, one or more carbonprecursors, or any combination thereof. Non-limiting examples ofreactants include reducing agents, oxidizing agents such as water, ozone(O₃), carbon monoxide (CO), carbon dioxide (CO₂), ammonia (NH₃),hydrogen (H₂), metal organic silicon containing compounds such astetraethyl orthosilicate (TEOS), silicon tetrachloride (SiCl₄) and thelike. In embodiments, the aluminum containing layer 220 can be orinclude metallic aluminum, aluminum oxide, aluminum nitride, aluminumsilicide, aluminum carbide, or any combination thereof. In embodiments,the aluminum containing layer 220 can be or include aluminum oxide,aluminum nitride, or any combination thereof. In embodiments, thealuminum containing layer 220 is aluminum oxide. In embodiments, thealuminum containing layer 220 is aluminum nitride.

In some embodiments, the aluminum precursor can be or include one ormore of aluminum alkyl compounds, one or more of aluminum alkoxycompounds, one or more of aluminum acetylacetonate compounds,substitutes thereof, complexes thereof, abducts thereof, salts thereof,or any combination thereof. Exemplary aluminum precursors can be orinclude trimethylaluminum, triethylaluminum, tripropylaluminum,tributylaluminum, trimethoxyaluminum, triethoxyaluminum,tripropoxyaluminum, tributoxyaluminum, aluminum acetylacetonate(Al(acac)3, also known as, tris(2,4-pentanediono) aluminum), aluminumhexafiuoroacefylacefonate (Al(hfac)3), trisdipivaloylmethanatoaluminum(DPM₃Al; (On HigC bAl), isomers thereof, complexes thereof, abductsthereof, salts thereof, or any combination thereof.

In some embodiments, suitable deposition temperatures includetemperatures of 100 degrees Celsius to 400 degrees Celsius. In someembodiments, trimethylalurninum (deposited at a temperature of about100° C. to about 400° C.) is delivered to the semiconductormanufacturing apparatus component 202 via vapor phase delivery for atpre-determined pulse length of 0.1 seconds. During processing, thedeposition reactor is operated under a flow of nitrogen carrier gas (100sccm to 10,000 sccm) such as about 1,500 sccm) with the chamber held ata pre-determined temperature of about 200° C. to about 400° C., or about210° C. to about 350° C. and pressure about 1 Torr to about 10 Torr suchas about 2.0 Torr After the pulse of trimethylaluminum, the chamber isthen subsequently purged of all requisite gases and byproducts for adetermined amount of time. Subsequently, water vapor is pulsed into thechamber for about 0.1 seconds at chamber pressure of about 1.5-3.0 Torrsuch as about 2.0 Torr or 2.0 Torr. An additional chamber purge is thenperformed to rid the reactor of any excess reactants and reactionbyproducts. An additional purge may be performed after deposition duringa chamber cooldown period. In some embodiments, the process is repeatedas many times as necessary to get the semiconductor manufacturingapparatus component 202 coated with a coating comprising or consistingof Al₂O₃ film to the desired film thickness or a preselected filmthickness. In some embodiments, the semiconductor manufacturingapparatus component 202 may be subjected to further downstreamprocessing such as annealing at a temperature of up to 1000° C. such asabout 500° C. under inert nitrogen flow of e.g., about 500 sccm for upto 24 hours, or about one hour.

In some embodiments, the present disclosure relates to a method ofdepositing a coating on a semiconductor manufacturing apparatuscomponent, including: sequentially exposing a a semiconductormanufacturing apparatus component comprising nickel or nickel alloy toan aluminum precursor and a reactant to form an aluminum containinglayer on a surface of the semiconductor manufacturing apparatuscomponent by a deposition process. In some embodiments, the aluminumprecursor is trimethylaluminum and the reactant is water. In someembodiments, the aluminum containing layer is deposited to a thicknessof 100 to 1000 nanometers. In some embodiments, the deposition processis an atomic layer deposition (ALD) process, a plasma-enhanced ALD(PE-ALD) process, a thermal chemical vapor deposition (CVD) process, aplasma-enhanced CVD (PE-CVD) process, or any combination thereof. Insome embodiments, the atomic layer deposition (ALD) process comprisescontacting the semiconductor manufacturing apparatus component with thealuminum precursor at a temperature between 100 to 400 degrees Celsiusat a pressure of 1 to 10 Torr. In some embodiments, the aluminumcontaining layer is metallic aluminum, aluminum oxide, aluminum nitride,aluminum silicide, aluminum carbide, or any combination thereof. In someembodiments, the aluminum oxide is Al₂O₃. In some embodiments, themethods further include depositing a buffering layer directly atop thesemiconductor manufacturing apparatus component comprising nickel ornickel alloy, and forming the aluminum containing layer directly atopthe buffering layer. In some embodiments, the depositing of the bufferlayer is an atomic layer deposition (ALD) process. In some embodiments,the buffering layer comprises yttrium oxide, titanium oxide, titaniumnitride, or combinations thereof. In some embodiments, the bufferinglayer forms an adhesive layer between the semiconductor manufacturingapparatus component comprising nickel or nickel alloy and the aluminumcontaining layer. In some embodiments, the semiconductor manufacturingapparatus component is a showerhead. In some embodiments, thesemiconductor manufacturing apparatus component is a showerhead havingan outer surface or top surface comprising or consisting of nickel,nickel alloy, or combinations thereof.

FIG. 3 is a flow chart of a method 300 for depositing a coating on oneor more semiconductor manufacturing components, according to one or moreembodiments described and discussed herein. FIGS. 4A-4C depict thestages of depositing a coating on a semiconductor manufacturingapparatus component in accordance with method 300. FIG. 5 depicts adeposition chamber including various components suitable for coating inaccordance with the present disclosure.

Referring now to FIG. 3, a method 300 of depositing a coating on asemiconductor manufacturing apparatus component, includes, at block 320sequentially exposing a semiconductor manufacturing apparatus componenthaving a first surface comprising nickel or nickel alloy to a firstprecursor and a first reactant to form a buffer layer having a topsurface on the first surface by a first vapor deposition process; and atblock 340 exposing an aluminum precursor and a reactant to form analuminum containing layer on the top surface by a second vapordeposition process.

In some embodiments, at block 320 the semiconductor manufacturingapparatus component 402 can be exposed to a first precursor and a firstreactant to form a buffer layer 410 having a top surface 415 on thesemiconductor manufacturing apparatus component 402 by a vapordeposition process, as depicted in FIG. 4A. The vapor deposition processcan be an ALD process, a plasma-enhanced ALD (PE-ALD) process, a thermalchemical vapor deposition (CVD) process, a plasma-enhanced CVD (PE-CVD)process, or any combination thereof. In one or more embodiments, thevapor deposition process is an ALD process and the method includessequentially exposing the surface of the semiconductor manufacturingapparatus component 402 to the first precursor and the first reactant toform the buffer layer. Each cycle of the ALD process includes exposingthe surface 411 of the semiconductor manufacturing apparatus component402 to the first precursor, conducting a purge, exposing thesemiconductor manufacturing apparatus component 402 to the firstreactant, and conducting a purge to form the buffer layer 410. Thecycles may repeat until a buffer layer having a predetermined thicknessis obtained. In some embodiments, the order of the first precursor andthe first reactant can be reversed, so the ALD cycle includes exposingthe surface 411 of the semiconductor manufacturing apparatus component402 to the first reactant, conducting a purge, exposing thesemiconductor manufacturing apparatus component 402 to the firstprecursor, and conducting a pump-purge to form the buffer layer 410.

In some embodiments, during each ALD cycle, the semiconductormanufacturing apparatus component 402 is exposed to the first precursorfor about 0.1 seconds to about 10 seconds, the first reactant for about0.05 seconds to about 10 seconds, and the purge for about 0.5 seconds toabout 30 seconds. In some embodiments, during each ALD cycle, thesemiconductor manufacturing apparatus component 402 is exposed to thefirst precursor for about 0.05 seconds to about 3 seconds, the firstreactant for about 0.05 seconds to about 3 seconds, and the purge forabout 1 second to about 10 seconds.

In some embodiments, each ALD cycle is repeated from 2, 3, 4, 5, 6, 8,about 10, about 12, or about 15 times to about 18, about 20, about 25,about 30, about 40, about 50, about 65, about 80, about 100, about 120,about 150, about 200, about 250, about 300, about 350, about 400, about500, about 800, about 1,000, about 2000, about 3000, about 4000, about5000, about 6000 or more times to form the buffer layer 410. Inembodiments, each ALD cycle is repeated until a predetermined thicknessof buffer layer 410 is obtained.

In some embodiments, the vapor deposition process is a CVD process andthe method includes simultaneously exposing the semiconductormanufacturing apparatus component 402 to the first precursor and thefirst reactant to form the buffer layer 410. During an ALD process or aCVD process, each of the first precursor and the first reactant canindependent include one or more carrier gases. One or more purge gasescan be flowed across the semiconductor manufacturing apparatus component402 and/or throughout the processing chamber in between the exposures ofthe first precursor and the first reactant in some examples, the samegas may be used as a carrier gas and a purge gas. Exemplary carriergases and purge gases can independently be or include one or more ofnitrogen (N₂), argon, helium, neon, hydrogen (H₂), or any combinationthereof.

In embodiments, the buffer layer 410 can have a thickness of about 0.1nm to 100 nm such as about 0.2 nm, about 0.3 nm, about 0.4 nm, about 0.5nm, about 0.8 nm, about 1 nm, about 2 nm, about 3 nm, about 5 nm, about8 nm, about 10 nm, about 12 nm, or about 15 nm to about 18 nm, about 20nm, about 25 nm, about 30 nm, about 40 nm, about 50 nm, about 60 nm,about 80 nm, about 100 nm, about 120 nm, about 150 nm, about 200 nm,about 300 nm, about 400 nm, about 500 nm, about 600 nm, about 700 nm,about 800 nm, or about 900 nm.

In some embodiments, the first precursor contains one or moreprecursors. The first reactant contains one or more reducing agents, oneor more oxidizing agents, one or more nitriding agents, one or moresilicon precursors, one or more carbon precursors, or any combinationthereof. In embodiments, the first reactant contains one reducing agent,one oxidizing agent, one nitriding agent, one silicon precursors, or onecarbon precursors.

In some embodiments, the first precursor is a titanium precursor and mayinclude one or more of titanium cyclopentadiene compounds, one or moreof titanium amino compounds, one or more of titanium alkyl compounds,one or more of titanium alkoxy compounds, substitutes thereof, complexesthereof, abducts thereof, salts thereof, or any combination thereof.Exemplary titanium precursors can be or includebis(methylcyclopentadiene) dimethyltitanium ((MeCp)2TiMe2),bis(methylcyclopentadiene) methylmethoxytitanium, bis(cyclopentadiene)dimethyltitanium ((Cp)2TiMe2), tetra(tert-butoxy) titanium, titaniumisopropoxide ((iPrO{circumflex over ( )}Ti), tetrakis(dimethyiamino)titanium (TDMAT), tetrakis(diethylamino) titanium (TDEAT),tetrakis(ethylmethylamino) titanium (TEMAT), isomers thereof, complexesthereof, abducts thereof, salts thereof, or any combination thereof. Insome embodiments, titanium precursor includes TiCl₄ and HCl as abyproduct, and TiNH_(x)Cl_(y) adducts (wherein x and y are numbers).

In one or more examples, the buffering layer 410 is atitanium-containing layer which can be or include metallic titanium andthe first reactant contains one or more reducing agents. Exemplaryreducing agents can be or include hydrogen (H₂), ammonia, hydrazine, oneor more hydrazine compounds, one or more alcohols, a cydohexadiene, adihydropyrazine, an aluminum containing compound, abducts thereof, saltsthereof, plasma derivatives thereof, or any combination thereof.

In some embodiments, the buffering layer 410 is a titanium-containinglayer which can be or include titanium oxide and the first reactantcontains one or more oxidizing agents. In other examples, the bufferinglayer 410 is a yttrium-containing layer which can be or includeyttrium-oxide and the first reactant contains one or more oxidizingagents. In further examples, the buffering layer 410. Exemplaryoxidizing agents can be or include water (e.g., steam), oxygen (O₂),atomic oxygen, ozone, nitrous oxide, one or more peroxides, one or morealcohols, plasmas thereof, or any combination thereof.

In some embodiments, the buffering layer 410 is a titanium-containinglayer which can be or include titanium nitride and the first reactantcontains one or more nitriding agents.

Referring to FIG. 3 at block 340 the semiconductor manufacturingapparatus component is exposed to a second precursor such as an aluminumprecursor described above and a second reactant such as reactantsdescribed above to form the aluminum containing layer 420 on thebuffering layer 410 by an ALD process. In some embodiments, thebuffering layer 410 and aluminum containing layer 420 have differentcompositions from each other. In some examples, the first precursor is adifferent precursor than the second precursor, so the first precursor isa source of a first type of metal and the second precursor is a sourceof a second type of metal and the first and second types of metal aredifferent. For example, in embodiments, the first type of metal isdevoid of aluminum, and the second type of metal comprises aluminum suchas aluminum oxide.

In embodiments, the second precursor can be or include one or morealuminum precursors. In some embodiments, the second reactant can be orinclude one or more reducing agents, one or more oxidizing agents suchas water, one or more nitriding agents, one or more silicon precursors,one or more carbon precursors, or any combination thereof, as describedand discussed above. During the ALD process, each of the aluminumprecursor and the second reactant can independent include one or morecarrier gases. One or more purge gases can be flowed across thesemiconductor manufacturing apparatus component 402 and/or throughoutthe processing chamber in between the exposures of the second precursorand the second reactant. In some examples, the same gas may be used as acarrier gas and a purge gas. Exemplary carrier gases and purge gases canindependently be or include one or more of nitrogen (N₂), argon, helium,neon, hydrogen (H₂), or any combination thereof.

In embodiments, the aluminum containing layer 420 contains aluminumoxide, aluminum nitride, or any combination thereof. In one or moreexamples, if the buffer layer 410 contains or comprises yttrium oxide,titanium oxide, titanium nitride or combinations thereof, then thealuminum containing layer 420 contains aluminum oxide or aluminumnitride.

In embodiments, each cycle of the ALD process includes exposing thesemiconductor manufacturing apparatus component 402 to the aluminumprecursor, conducting a purge, exposing the semiconductor manufacturingapparatus component 402 to the second reactant, and conducting a purgeto form the second deposited layer such as the aluminum containing layer420. The order of the second precursor and the second reactant can bereversed,

In embodiments, during each ALD cycle, the semiconductor manufacturingapparatus component 402 including the buffer layer 410 is exposed to thesecond precursor such as aluminum precursor for about 0.05 seconds toabout 10 seconds, the second reactant for about 0.05 seconds to about 10seconds, and the purge may have a duration of about 0.5 seconds to about30 seconds.

In some embodiments, each ALD cycle is repeated from 2, 3, 4, 5, 6, 8,about 10, about 12, or about 15 times to about 18, about 20, about 25,about 30, about 40, about 50, about 65, about 80, about 100, about 120,about 150, about 200, about 250, about 300, about 350, about 400, about500, about 800, about 1 ,000, about 2,000, about 3,000, about 4,000,about 5,000, about 6,000, or more times to form the second depositedlayer or aluminum containing layer 220.

In some embodiments, the second deposited layer such as aluminumcontaining layer 420 can have a thickness sufficient to protect thesemiconductor manufacturing apparatus component 402 from harshconditions as mentioned herein. In some embodiments, the aluminumcontaining layer 420 can have a thickness of about 1.0 nm to 1,000 nm,for example, about 1 nm, about 2 nm, about 3 nm, about 5 nm, about 8 nm,about 10 nm, about 12 nm, or about 15 nm to about 18 nm, about 20 nm,about 25 nm, about 30 nm, about 40 nm, about 50 nm, about 60 nm, about80 nm, about 100 nm, about 120 nm, about 150 nm, about 200 nm, about 300nm, about 400 nm, about 500 nm, about 600 nm, about 700 nm, about 800nm, about 900 nm, about 950 nm, about 1000 nm. In embodiments, thedeposition cycle may be repeated until the desired or preselectedthickness of the aluminum containing layer is achieved.

In embodiments, the buffer layer is deposited to a thickness of up to100 nm, and the second deposited layer such as aluminum oxide isdeposited to a thickness of up to 1,000 nm,

In some embodiments, the aluminum containing layer is subjected tofurther processing such as annealing to heat and densify the material ofthe aluminum containing layer. The annealing process can be or include athermal anneal, a plasma anneal, an ultraviolet anneal, a laser anneal,or any combination thereof.

In one or more embodiments, the protective coatings including thealuminum containing layer 420 and buffer layer 410 can have a relativelyhigh degree of uniformity. The protective coatings can have a uniformityof less than 50%, less than 40%, or less than 30% of the thickness ofthe respective protective coating. In some embodiments, the aluminumcontaining layer 420 and buffer layer 410 can each have a relativelyhigh uniformity requirement such as less than 10%, or less than 5%, suchas 1 to 4.5%.

In some embodiments, a method of depositing a coating on a semiconductormanufacturing apparatus component, includes: sequentially exposing asemiconductor manufacturing apparatus component having a first surfacecomprising nickel or nickel alloy to a first precursor and a firstreactant to form a buffer layer having a top surface on the firstsurface by a first vapor deposition process; and exposing an aluminumprecursor and a second reactant to form an aluminum containing layer onthe top surface by a second vapor deposition process. In someembodiments, the aluminum precursor is trimethylaluminum and thereactant is water. In some embodiments, the aluminum containing layer isdeposited on the top surface to a thickness of 100 to 1000 nanometers.In some embodiments, the first vapor deposition process and second vapordeposition process are an atomic layer deposition (ALD) process. In someembodiments, wherein the first precursor is suitable for forming thebuffer layer comprising yttrium oxide (YO), titanium oxide (TiO), ortitanium nitride (TiN). In some embodiments, the second vapor depositionprocess is an atomic layer deposition (ALD) process further comprisingcontacting the top surface with the aluminum precursor at a temperaturebetween 200 to 400 degrees Celsius at a pressure of 1 to 10 Torr. Insome embodiments, the aluminum containing layer comprises or consists ofAl₂O₃.

In some embodiments, a suitable deposition chamber for depositing thebuffering layer such as buffer layer 410 and aluminum containing layer220 or aluminum containing layer 420 is a deposition process chamberconfigured to hold the components or parts thereof of the processchamber, such as deposition process chamber 500 is available fromApplied Materials, Inc. located in Santa Clara, Calif. In someembodiments, the coating deposition chamber is a batch style reactor anddeposition of buffer layer 410 and aluminum containing layer 220 oraluminum containing layer 420 may occur ex-situ.

In embodiments, the deposition process chamber 500 includes componentswhich may be wholly or partially coated with a protective coating of thepresent disclose. In embodiments, the deposition process chamber 500 maybe part of a processing system shown in FIG. 6 including multipleprocessing chambers connected to a central transfer chamber and servicedby a robot. The deposition process chamber 500 includes walls 506, abottom 508, and a lid 510 defining a process volume 512. The walls 506and bottom 508 are typically fabricated from a unitary block ofaluminum; however, may have a nickel or nickel alloy surface asdescribed above suitable for coating in accordance with the presentdisclosure. The walls 506 may have conduits (not shown) therein throughwhich a fluid may be passed to control the temperature of the walls 506.The deposition process chamber 500 may also include a pumping ring 514coupling the process volume 512 to an exhaust port 516 as well as otherpumping components (not shown). A substrate support assembly 538, whichmay be heated, may be centrally disposed within the deposition processchamber 500. The substrate support assembly 538 supports a substrate 503during a deposition process. The substrate support assembly 538generally is fabricated from aluminum, ceramic or a combination ofaluminum and ceramic and typically includes a vacuum port (not shown)and at least one or more heating elements 532.

In embodiments, a vacuum port may be used to apply a vacuum between thesubstrate 503 and the substrate support assembly 538 to secure thesubstrate 503 to the substrate support assembly 538 during thedeposition process. The one or more heating elements 532, may be, forexample, electrodes disposed in the substrate support assembly 538, andcoupled to a power source 530, to heat the substrate support assembly538 and substrate 503 positioned thereon to a predetermined temperature.

In embodiments, the substrate support assembly 538 is coupled to a stem542. The stem 542 provides a conduit for electrical leads, vacuum andgas supply lines between the substrate support assembly 538 and othercomponents of the deposition process chamber 500. Additionally, the stem542 couples the substrate support assembly 538 to a lift system 544 tomove the substrate support assembly 538 between an elevated position (asshown in FIG. 5) and a lowered position (not shown). Bellows 546 providea vacuum seal between the process volume 512 and the atmosphere outsidethe deposition process chamber 500 while facilitating the movement ofthe substrate support assembly 538.

The substrate support assembly 538 additionally supports acircumscribing shadow ring 548. The shadow ring 548 is annular in formand typically comprises a ceramic material such as, for example,aluminum nitride. Generally, the shadow ring 548 prevents deposition atthe edge of the substrate 503 and substrate support assembly 538.

The lid 510 is supported by the walls 506 and may be removable to allowfor servicing of the deposition process chamber 500. The lid 510 maygenerally be comprised of aluminum and may additionally have heattransfer fluid channels 524 formed therein. The heat transfer fluidchannels 524 are coupled to a fluid source (not shown) flowing a heattransfer fluid through the lid 510. Fluid flowing through the heattransfer fluid channels 524 regulates the temperature of the lid 510.

A mixing block 534 may be disposed in the lid 510. The mixing block 534may be coupled to gas sources 504. Generally, individual gas streamsfrom the gas sources 504 may be combined in the mixing block 534. Thesegases are mixed into a single homogeneous gas flow in the mixing block534 and introduced into the process volume 512 after passing through ashowerhead 518 diffusing the gas flow outwardly towards the walls 506.

The showerhead 518 may generally be coupled to an interior side 520 ofthe lid 510. In embodiments, showerhead 518 is wholly or partiallycomprised of nickel or nickel alloy as described above, wherein thenickel or nickel alloy is in a position suitable for coating inaccordance with the present disclosure. A perforated blocker plate 536may optionally be disposed in the space 522 between the showerhead 518and lid 510. Gases (i.e., process and other gases) may enter thedeposition process chamber 500 through the mixing block 534 are firstdiffused by the blocker plate 536 as the gases fill the space 522 behindthe showerhead 518. The gases then pass through the showerhead 518 andinto the deposition process chamber 500. The blocker plate 536 and theshowerhead 518 are configured to provide a uniform flow of gases to thedeposition process chamber 500.

In some embodiments, at least one of the lines supplying process gas,such as a first or second precursor in accordance with the presentdisclosure, from gas sources 504 to deposition process chamber 500advantageously includes a valve (not shown) for diverting gas flow, soduring purging of the deposition process chamber 500 the mass flowcontroller (MFC) for the precursor gas source does not need to be shutoff. Diverting the flow of the precursor during purge steps, as opposedto shutting off the flow, reduces overall throughput time by eliminatingthe extra time needed for the MFC to stabilize the flow of precursorafter each purge step.

The deposition process chamber 500 can be controlled by a microprocessorcontroller 554. The microprocessor controller may be one of any form ofgeneral purpose computer processor or central processing unit (CPU)suitable for use in an industrial setting for controlling variouschambers and sub-processors. The computer processor may use any suitablememory, such as random access memory, read only memory, floppy discdrive, hard disk, or any other form of digital storage, local or remote.Various support circuits may be coupled to the CPU for supporting theprocessor in a conventional manner. Software routines, as required, maybe stored in the memory or executed by a second CPU remotely located.

The software routines are executed after the substrate is positioned onthe substrate support. The software routines, when executed, transformthe general purpose computer into a specific process computer to controlthe chamber operation so a chamber process is performed. Alternatively,the software routines may be performed in hardware as an applicationspecific integrated circuit or other type of hardware implementation, ora combination of software and hardware.

In embodiments a deposition process chamber is configured for depositinga coating on a semiconductor manufacturing apparatus component,including sequentially exposing a semiconductor manufacturing apparatuscomponent comprising nickel or nickel alloy to an aluminum precursor anda reactant to form an aluminum containing layer on a surface of thesemiconductor manufacturing apparatus component by a deposition process.In embodiments, the deposition process chamber is configured fordepositing one or more layers of the present disclosure under conditionsdescribed hereinabove. In embodiments, a chamber such as depositionprocess chamber 500 is sized to accommodate the deposition processingchamber 500 parts or portions thereof for coating. The chamber may alsoinclude a microprocessor controller with memory for a non-transitorycomputer readable medium having instructions stored thereon that, whenexecuted, cause a chamber to deposit a coating on a semiconductormanufacturing apparatus component, by sequentially exposing asemiconductor manufacturing apparatus component including nickel ornickel alloy to an aluminum precursor and a reactant to form an aluminumcontaining layer on a surface of the semiconductor manufacturingapparatus component by a deposition process.

In some embodiments, the present disclosure relates to a semiconductormanufacturing apparatus component, including: an aluminum containinglayer disposed on a nickel or nickel alloy surface of the semiconductormanufacturing apparatus component, wherein the semiconductormanufacturing apparatus component is one or more of a showerhead, awall, a lid, a ring, a bottom, a blocker plate, or a substrate supportassembly.

In some embodiments, the present disclosure relates to a processingchamber, including: an aluminum containing layer disposed on a nickel ornickel alloy surface of the processing chamber or a component thereof,wherein the processing chamber includes a semiconductor manufacturingapparatus component such as a showerhead, a wall, a lid, a ring, abottom, a blocker plate, or a substrate support assembly, orcombinations thereof.

The methods described herein may be performed in individual processchambers and may be provided in a standalone configuration or as part ofone or more cluster tools including chambers, components or partsthereof coated in accordance with the present disclosure, for example,an integrated tool 600 (i.e., cluster tool) described below with respectto FIG. 6. Examples of the integrated tool 600 include the ENDURA®,CENTURA®, or PRODUCER® line of processing systems, available fromApplied Materials, Inc., of Santa Clara, Calif. However, the methodsdescribed herein may be practiced using other cluster tools havingsuitable process chambers coupled thereto, or in other suitable processchambers.

The integrated tool 600 can include two load lock chambers 606A, 606Bfor transferring of substrates into and out of the integrated tool 600.Typically, since the integrated tool 600 is under vacuum, the load lockchambers 606A, 606B may pump down the pressure within the load lockchambers when substrates are introduced into the integrated tool 600. Afirst robot 610 may transfer the substrates between the load lockchambers 606A, 606B, and a first set of one or more substrate processingchambers 612, 614, 616, 618 (four are shown) coupled to a first transferchamber 650. Each substrate processing chamber 612, 614, 616, 618, canbe outfitted to perform a number of substrate processing operations. Insome embodiments, the first set of one or more substrate processingchambers 612, 614, 616, 618 may include any combination of PVD, ALD,CVD, etch, degas, or pre-clean chambers. For example, in someembodiments, the processing chambers, 612, 614, 616, 618 include twopre-clean chambers and two degas chambers.

The first robot 610 can also transfer substrates to/from twointermediate transfer chambers 622, 624. The intermediate transferchambers 622, 624 can be used to maintain ultrahigh vacuum conditionswhile allowing substrates to be transferred within the integrated tool600. A second robot 630 can transfer the substrates between theintermediate transfer chambers 622, 624 and a second set of one or moresubstrate processing chambers 632, 634, 635, 636, 638 coupled to asecond transfer chamber 655. The substrate processing chambers 632, 634,635, 636, 638 can be outfitted to perform a variety of substrateprocessing operations including the methods described above in additionto, physical vapor deposition processes (PVD), chemical vapor deposition(CVD), etching, orientation and other substrate processes. Inembodiments, the cluster tool is configured to include chambersconfigured for forming the interconnect structures in accordance withthe present disclosure.

In some embodiments, the present disclosure relates to a non-transitorycomputer readable medium having instructions stored thereon that, whenexecuted, cause a deposition chamber to deposit a coating on asemiconductor manufacturing apparatus component, by sequentiallyexposing a substrate including nickel or nickel alloy to an aluminumprecursor and a reactant to form an aluminum containing layer on asurface of the semiconductor manufacturing apparatus component by adeposition process.

In some embodiments, the present disclosure relates to a non-transitorycomputer readable medium having instructions stored thereon that, whenexecuted, cause a deposition chamber to deposit a coating on asemiconductor manufacturing apparatus component, by sequentiallyexposing a semiconductor manufacturing apparatus component having afirst surface comprising nickel or nickel alloy to a first precursor anda first reactant to form a buffer layer having a top surface on thefirst surface by a first vapor deposition process; and exposing analuminum precursor and a second reactant to form an aluminum containinglayer on the top surface by a second vapor deposition process.

While the foregoing is directed to embodiments of the presentdisclosure, other and further embodiments of the disclosure may bedevised without departing from the basic scope thereof.

1. A method of depositing a coating on a semiconductor manufacturingapparatus component, comprising: sequentially exposing a semiconductormanufacturing apparatus component comprising nickel or nickel alloy toan aluminum precursor and a reactant to form an aluminum containinglayer on a surface of the semiconductor manufacturing apparatuscomponent by a deposition process.
 2. The method of claim 1, wherein thealuminum precursor is trimethylaluminum and the reactant is water. 3.The method of claim 1, wherein the aluminum containing layer isdeposited to a thickness of 100 to 1000 nanometers.
 4. The method ofclaim 1, wherein the deposition process is an atomic layer deposition(ALD) process, a plasma-enhanced ALD (PE-ALD) process, a thermalchemical vapor deposition (CVD) process, a plasma-enhanced CVD (PE-CVD)process, or any combination thereof.
 5. The method of claim 4, whereinthe deposition process is an atomic layer deposition (ALD) process. andwherein the atomic layer deposition (ALD) process comprises contactingthe semiconductor manufacturing apparatus component with the aluminumprecursor at a temperature between 100 to 450 degrees Celsius at apressure of 1 to 10 Torr.
 6. The method of claim 1, wherein the aluminumcontaining layer is metallic aluminum, aluminum oxide, aluminum nitride,aluminum silicide, aluminum carbide, or any combination thereof.
 7. Themethod of claim 6, wherein the aluminum oxide is Al₂O₃.
 8. The method ofclaim 1 further comprising: depositing a buffering layer directly atopthe semiconductor manufacturing apparatus component comprising nickel ornickel alloy, and forming the aluminum containing layer directly atopthe buffering layer.
 9. The method of claim 8, wherein the depositing isan atomic layer deposition (ALD) process.
 10. The method of claim 8,wherein the buffering layer comprises yttrium oxide, titanium oxide,titanium nitride, or combinations thereof.
 11. The method of claim 8,wherein the buffering layer forms an adhesive layer between thesemiconductor manufacturing apparatus component comprising nickel ornickel alloy and the aluminum containing layer.
 12. The method of claim1, wherein the a semiconductor manufacturing apparatus component is ashowerhead.
 13. A method of depositing a coating on a semiconductormanufacturing apparatus component, comprising: sequentially exposing asemiconductor manufacturing apparatus component having a first surfacecomprising nickel or nickel alloy to a first precursor and a firstreactant to form a buffer layer having a top surface on the firstsurface by a first vapor deposition process; and exposing an aluminumprecursor and a second reactant to form an aluminum containing layer onthe top surface by a second vapor deposition process.
 14. The method ofclaim 13, wherein the aluminum precursor is trimethylaluminum and thesecond reactant is water.
 15. The method of claim 13, wherein thealuminum containing layer is deposited on the top surface to a thicknessof 100 to 1000 nanometers.
 16. The method of claim 13, wherein the firstvapor deposition process and second vapor deposition process are atomiclayer deposition (ALD) processes.
 17. The method of claim 13, whereinthe first precursor is suitable for forming the buffer layer comprisingyttrium oxide (YO), titanium oxide (TiO), or titanium nitride (TiN). 18.The method of claim 13, wherein the second vapor deposition process isan atomic layer deposition (ALD) process further comprising contactingthe top surface with the aluminum precursor at a temperature between 100to 450 degrees Celsius at a pressure of 1 to 10 Torr.
 19. The method ofclaim 13, wherein the aluminum containing layer comprises or consists ofAl₂O₃.
 20. A semiconductor manufacturing apparatus component,comprising: an aluminum containing layer disposed on a nickel or nickelalloy surface of the semiconductor manufacturing apparatus component,wherein the semiconductor manufacturing apparatus component is one ormore of a showerhead, a wall, a lid, a ring, a bottom, a blocker plate,or a substrate support assembly.